Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

We present a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfO2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and by electron beam evaporation (e-beam), with equivalent oxide thicknesses in the ran...

cellular behavior and scanning electron microscope evaluation of pro-root mta, root mta and modified mta on fibroblast l929

چکیده ندارد.

Derivation of ionization energy and electron affinity equations using chemical hardness and absolute electronegativity in isoelectronic series

Chemical hardness () and absolute electronegativity () have important applications in chemistry. Inthe conceptual Density Functional theory (DFT), these concepts has been associated with electronicenergy and the relationship with ionization energy (I) and electron affinity (A) of these concepts hasbeen given. In this study, graphical method was used in order to see the relationship with the ato...

Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy

The application of the STM-based technique of ballistic electron emission microscopy (BEEM) to the study of transport properties of SiO2 gate oxide layers is reviewed. Oxide degradation observed on a local scale of nanometer dimensions ranges from the filling of electron traps with low-kinetic-energy electrons injected just above the oxide barrier, to trap generation and filling triggered by el...

Effective mass of electrons and holes in bilayer graphene: Electron-hole asymmetryand electron-electron interaction