Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

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Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

We present a combined electrical and modeling study to determine the tunneling electron effective mass and electron affinity for HfO2. Experimental capacitance-voltage (C-V) and current-voltage (I-V) characteristics are presented for HfO2 films deposited on Si(100) substrates by atomic layer deposition (ALD) and by electron beam evaporation (e-beam), with equivalent oxide thicknesses in the ran...

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ژورنال

عنوان ژورنال: Solid-State Electronics

سال: 2009

ISSN: 0038-1101

DOI: 10.1016/j.sse.2008.09.018